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SOD-323 12v smd zener diode BZT52C2V4S-BZT52C43S
SOD-323 Plastic-Encapsulate Diodes BZT52C2V4S-BZT52C43S Zener Diode
Features
Planar die construction
200mW power dissipation on ceramic PBC
General purpose, medium current
Ideally suited for automated assembly processes
Available in lead free version
Applications
Voltage stabilization
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25℃
Parameter | Test Conditions | Type | Symbol | Value | Unit |
Forward Voltage (Note 2) @ I F = 10mA | VF | 0.9 | V | ||
Thermal Resistance from Junction to Ambient | R θJA | 625 | CW | ||
Junction temperature | Tj | 150 | ℃ | ||
Storage temperature range | Tstg | -55~+150 | ℃ |
ELECTRICAL CHARACTERISTICS
T a =25 ℃ unless otherwise specified
Zener Voltage Range (Note 2) |
Maximum Zener Impedance (Note 3) |
Maximum Reverse Current (Note 2 |
Typical Temperature Coefficient @I ZTC mV/ ℃ |
Test Current I ZTC |
|||||||||
V Z @I ZT | I ZT | Z ZT @I ZT | Z ZK @I ZK | I ZK | I R | V R | |||||||
Nom V | Min(V) | Max(V) | (mA) | Ω | (mA) | μA | V | Min | Max | mA | |||
BZT52C2V4S | WX | 2.4 | 2.0 | 2.6 | 5 | 100 | 600 | 1.0 | 50 | 1.0 | -3.5 | 0 | 5 |
BZT52C2V7S | W1 | 2.7 | 2.5 | 2.9 | 5 | 100 | 600 | 1.0 | 20 | 1.0 | -3.5 | 0 | 5 |
BZT52C3V0S | W2 | 3.0 | 2.8 | 3.2 | 5 | 95 | 600 | 1.0 | 10 | 1.0 | -3.5 | 0 | 5 |
BZT52C3V3S | W3 | 3.3 | 3.1 | 3.5 | 5 | 95 | 600 | 1.0 | 5 | 1.0 | -3.5 | 0 | 5 |
BZT52C3V6S | W4 | 3.6 | 3.4 | 3.8 | 5 | 90 | 600 | 1.0 | 5 | 1.0 | -3.5 | 0 | 5 |
BZT52C3V9S | W5 | 3.9 | 3.7 | 4.1 | 5 | 90 | 600 | 1.0 | 3 | 1.0 | -3.5 | 0 | 5 |
BZT52C4V3S | W6 | 4.3 | 4.0 | 4.6 | 5 | 90 | 600 | 1.0 | 3 | 1.0 | -3.5 | 0 | 5 |
BZT52C4V7S | W7 | 4.7 | 4.4 | 5.0 | 5 | 80 | 500 | 1.0 | 3 | 2.0 | -3.5 | 0.2 | 5 |
BZT52C5V1S | W8 | 5.1 | 4.8 | 5.4 | 5 | 60 | 480 | 1.0 | 2 | 2.0 | -2.7 | 1.2 | 5 |
BZT52C5V6S | W9 | 5.6 | 5.2 | 6.0 | 5 | 40 | 400 | 1.0 | 1 | 2.0 | -2.0 | 2.5 | 5 |
BZT52C6V2S | WA | 6.2 | 5.8 | 6.6 | 5 | 10 | 150 | 1.0 | 3 | 4.0 | 0.4 | 3.7 | 5 |
BZT52C6V8S | WB | 6.8 | 6.4 | 7.2 | 5 | 15 | 80 | 1.0 | 2 | 4.0 | 1.2 | 4.5 | 5 |
BZT52C7V5S | WC | 7.5 | 7.0 | 7.9 | 5 | 15 | 80 | 1.0 | 1 | 5.0 | 2.5 | 5.3 | 5 |
BZT52C8V2S | WD | 8.2 | 7.7 | 8.7 | 5 | 15 | 80 | 1.0 | 0.7 | 5.0 | 3.2 | 6.2 | 5 |
BZT52C9V1S | WE | 9.1 | 8.5 | 9.6 | 5 | 15 | 100 | 1.0 | 0.5 | 6.0 | 3.8 | 7.0 | 5 |
BZT52C10S | WF | 10 | 9.4 | 10.6 | 5 | 20 | 150 | 1.0 | 0.2 | 7.0 | 4.5 | 8.0 | 5 |
BZT52C11S | WG | 11 | 10.4 | 11.6 | 5 | 20 | 150 | 0.5 | 0.1 | 8.0 | 5.4 | 9.0 | 5 |
BZT52C12S | WH | 12 | 11.4 | 12.7 | 5 | 25 | 150 | 0.5 | 0.1 | 8.0 | 6.0 | 10 | 5 |
BZT52C13S | WI | 13 | 12.4 | 14.1 | 5 | 30 | 170 | 0.5 | 0.1 | 8.0 | 7.0 | 11 | 5 |
BZT52C15S | WJ | 15 | 13.8 | 15.6 | 5 | 30 | 200 | 0.5 | 0.1 | 10.5 | 9.2 | 13 | 5 |
BZT52C16S | WK | 16 | 15.3 | 17.1 | 5 | 40 | 200 | 0.5 | 0.1 | 11.2 | 10.4 | 14 | 5 |
BZT52C18S | WL | 18 | 16.8 | 19.1 | 5 | 45 | 225 | 0.5 | 0.1 | 12.6 | 12.4 | 16 | 5 |
BZT52C20S | WM | 20 | 18.8 | 21.2 | 5 | 55 | 225 | 0.5 | 0.1 | 14.0 | 14.4 | 18 | 5 |
BZT52C22S | WN | 22 | 22.8 | 23.3 | 5 | 55 | 250 | 0.5 | 0.1 | 15.4 | 16.4 | 20 | 5 |
BZT52C24S | WO | 24 | 22.8 | 25.6 | 5 | 70 | 250 | 0.5 | 0.1 | 16.8 | 18.4 | 22 | 5 |
BZT52C27S | WP | 27 | 25.1 | 28.9 | 2 | 80 | 300 | 0.5 | 0.1 | 18.9 | 21.4 | 25.3 | 2 |
BZT52C30S | WQ | 30 | 28.0 | 32.0 | 2 | 80 | 300 | 0.5 | 0.1 | 21.0 | 24.4 | 29.4 | 2 |
BZT52C33S | WR | 33 | 31.0 | 35.0 | 2 | 80 | 325 | 0.5 | 0.1 | 23.1 | 27.4 | 33.4 | 2 |
BZT52C36S | WS | 36 | 34.0 | 38.0 | 2 | 90 | 350 | 0.5 | 0.1 | 25.2 | 30.4 | 37.4 | 2 |
BZT52C39S | WT | 39 | 37.0 | 41.0 | 2 | 130 | 350 | 0.5 | 0.1 | 27.3 | 33.4 | 41.5 | 2 |
BZT52C43S | WU | 43 | 40.0 | 46.0 | 2 | 100 | 700 | 1 | 0.1 | 32 | 10 | 12 | 5 |
Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm 2 .
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz
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