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Surface Mount Schottky Barrier Diodes BAS86 50V Electronic Components
Features
1. Integrated protection ring against static discharge
2. Very low forward voltage
Applications:
Absolute Maximum Ratings
Tj=25℃
Parameter | Test Conditions | Symbol | Value | Unit |
Reverse voltage | VR | 50 | V | |
Peak forward surge current | tp=10 ms | IFSM | 5 | A |
Repetitive peak forward current | tp≤1s | IFRM | 500 | mA |
Forward current | IF | 200 | mA | |
Average forward current | IFAV | 200 | mA | |
Junction temperature | Tj | 125 | ℃ | |
Storage temperature range | Tstg | -65~+150 | ℃ | |
Junction ambient | on PC board 50mmx50mmx1.6mm | RthJA | 320 | K/W |
Electrical Characteristics
Tj = 25C
Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
Reverse Breakdown Voltage | V(BR)R | IR = 10ìA (pulsed) | 30 | V | ||
Leakage Current | IR | VR = 25V | 0.2 | 2 | μA | |
Forward Voltage | VF | Pulse Test tp < 300μs IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA |
0.5 |
0.24 0.32 0.4
0.8 | V | |
Capacitance | Ctot | VR = 1V, f = 1MHz | 10 | pF | ||
Reverse Recovery Time | trr | IF = 10mA, IR = 10mA IR = 1mA | 5 | ns |
Why choose XUYANG?
1. We deals in all diodes with nearly 20 years' expreience
2. We can provide technical support for buyers
3. Short delivery time and good price, high quality
4. Full product range will help you to save time and shipping cost
5. We can provide Samples free
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