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Surface Mount Small Signal Schottky Barrier Diode BAS48 Minin Melf
Features
1. High reliability
2. Very low forward voltage
3. Small surface mounting type
Applications:
Absolute Maximum Ratings
Tj=25℃
Parameter | Symbol | Value | Unit |
Repetitive peak reverse voltage | VRRM | 40 | V |
Forward Continuous Current at Tamb = 25 °C | IF | 350 | mA |
Repetitive Peak Forward Current at tp < 1 s, d < 0.5, Tamb = 25 °C | IFRM | 1 | A |
Surge Forward Current at tp < 10 ms, Tamb = 25 °C | IFSM | 7.51) | A |
Tamb = 25 °C IFSM 7.51) A Power Dissipation1) at Tamb = 65 °C | Ptot | 3301) | mW |
Junction temperature | Tj | 125 | ℃ |
Ambient Operating Temperature Range | Tamb | -65~+125 | ℃ |
Storage temperature range | Tstg | -65~+150 | ℃ |
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress
ratings only. Functional operation above the recommended operating conditions is not implied.
Extended exposure to stresses above the recommended operating conditions may affect device
reliability.
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Symbol | Min | Typ | Max | Unit | |
Reverse Breakdown Voltage tested with 100 mA Pulses | V(BR)R | 40 | V | ||
Forward Voltage Pulse Test tp < 300 ms, d < 2% at IF = 0.1 mA at IF = 10 mA at IF = 250 mA |
VF VF VF |
0.25 0.40 0.90 |
V V V | ||
Leakage Current Pulse Test tp < 300 ms, d < 2% at VR = 10 V at VR = 10 V, Tj = 60 °C at VR = 20 V at VR = 20 V, Tj = 60 °C at VR = 40 V at VR = 40 V, Tj = 60 °C |
IR IR IR IR IR IR |
|
2 15 5 25 25 50 |
mA mA mA mA mA mA | |
Capacitance at VR = 1 V, f = 1 MHz | Ctot | 12 | pF | ||
Thermal Resistance Junction to Ambient Air | RthJA | 0.3 | K/mW |
Drawing:
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