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10A Schottky Rectifier Diode 10CTQ150SPBF 10CTQ150PBF MOSFET Field Effect Transistor
FEATURES
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
MAJOR RATINGS AND CHARACTERISTICS | |||
SYMBOL | CHARACTERISTICS | VALUES | UNITS |
IF(AV) | Rectangular waveform | 10 | A |
VRRM | 150 | V | |
IFSM | tp = 5 μs sine | 620 | A |
VF | 5 Apk, TJ = 125 °C (per leg) | 0.73 | V |
TJ | Range | - 55 to 175 | °C |
ABSOLUTE MAXIMUM RATINGS | |||||
PARAMETER | SYMBOL | TEST CONDITIONS | VALUES | UNITS | |
Maximum average per leg forward current per device | IF(AV) | 50 % duty cycle at TC = 155 °C, rectangular waveform | 5 | A | |
10 | |||||
Maximum peak one cycle non-repetitive surge current per leg | IFSM | 5 μs sine or 3 μs rect. pulse | Following any rated load condition and with rated VRRM applied | 620 | A |
10 ms sine or 6 ms rect. pulse | 115 | ||||
Non-repetitive avalanche energy per leg | EAS | TJ = 25 °C, IAS = 1 A, L = 10 mH | 5 | mJ | |
Repetitive avalanche current per leg | IAR | Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical | 1 | A |
ELECTRICAL SPECIFICATIONS | |||||
PARAMETER | SYMBOL | TEST CONDITIONS | VALUES | UNITS | |
Maximum forward voltage drop per leg | VFM(1) | 5 A | TJ = 25 °C | 0.93 | V |
10 A | 1.10 | ||||
5 A | TJ = 125 °C | 0.73 | |||
10 A | 0.86 | ||||
Maximum reverse leakage current per leg | IRM(1) | TJ = 25 °C | VR = Rated VR | 0.05 | mA |
TJ = 125 °C | 7 | ||||
Threshold voltage | VF(TO) | TJ = TJ maximum | 0.468 | V | |
Forward slope resistance | rt | 28 | mΩ | ||
Maximum junction capacitance per leg | CT | VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C | 200 | pF | |
Typical series inductance per leg | LS | Measured lead to lead 5 mm from package body | 8.0 | nH | |
Maximum voltage rate of change | dV/dt | Rated VR | 10 000 | V/μs |
PARAMETER | SYMBOL | TEST CONDITIONS | VALUES | ||
Maximum junction and storage temperature range | TJ, TStg | - 55 to 175 | |||
Maximum thermal resistance, junction to case per leg | RthJC | DC operation | 3.50 | ||
Maximum thermal resistance, junction to case per package | 1.75 | ||||
Typical thermal resistance, case to heatsink (only for TO-220) | RthCS | Mounting surface, smooth and greased | 0.50 | ||
Approximate weight | 2 | ||||
Approximate weight | 0.07 | ||||
Mounting torque | minimum | 6 (5) | |||
maximum | 12 (10) | ||||
Marking device | Case style D2PAK | 10CTQ150S | |||
Case style TO-262 | 10CTQ150-1 |
Size:
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