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High Speed Switching Diode DIP Varactor Diode 1SS265 With DO-34 Glass Package
Features
1. Low differential forward resistance
2. Low diode capacitance
3. High reverse impedance
Applications
Band switching in VHF-tuners
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25℃
Parameter | Test Conditions | Symbol | Value | Unit |
DC Reverse voltage | VR | 35 | V | |
Average certified current | Io | 100 | mA | |
Power dissipation | Pd | 150 | mW | |
Junction temperature | Tj | 175 | °C | |
Storage temperature range | Tstg | -65~+125 | ℃ |
Maximum Thermal Resistance
Tj=25℃
Parameter | Test Conditions | Symbol | Value | Unit |
Junction ambient | I=4mm, TL=constant | RthJA | 350 | K/W |
Electrical Characteristics
Tj=25℃
Parameter | Test Condition | Symbol | Min | Typ | Max | Unit |
Forward Voltage | IF = 10mA | VF | 0.85 | 1 | V | |
Reverse current | VR= 20V | IR | 100 | nA | ||
Breakdown Voltage | IR = 10μA | Bv | 35 | V | ||
Teminal capacitance | f =1MHz, VR= 6V | Ct | 1.5 | pF | ||
Frequency resistance | f =100MHz, IF=10mA | rf | 0.5 | Ω |
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