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1Amp Super Fast Recovery Silicon Rectifier Glass Passivated 50-1000V RGP10A-M DO-41
FEATURES
● Glass passivated chip junctions
● Ideal for automated placement
● Ultrafast reverse recovery time
for high efficiency
● Low profile package
● High forward surge capability
● High temperature soldering:
260℃/10 seconds at terminals
● Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
Mechanical Date
Symbol | Parameter | Value | Units | ||||||
10A | 10B | 10D | 10G | 10J | 10K | 10M | |||
V RRM | Maximum Repetitive Reverse Voltage | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
I F(AV) | Average Rectified Forward Current, .375 " lead length @ T L = 55°C | 1.0 | A | ||||||
I FSM | Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave | 30 | A | ||||||
T stg | Storage Temperature Range | -65 to +175 | °C | ||||||
T J | Operating Junction Temperature | -65 to +175 | °C |
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Thermal Characteristics
Symboy | Paramete | Value | Units |
P D | Power Dissipation | 3.0 | W |
R θJA | Thermal Resistance, Junction to Ambient | 50 | °C/W |
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol | Parameter | Value | Units | ||||||
10A | 10B | 10D | 10G | 10J | 10K | 10M | |||
VF | Forward Voltage @ 1.0 A | 1.3 | V | ||||||
t rr | Reverse Recovery Time I F = 0.5 A, I R = 1.0 A, I rr = 0.25 A | 150 | 250 | 500 | A | ||||
I R | Reverse Current @ rated V R T A = 25°C T A = 150°C | 5.0 200 | uA uA | ||||||
C T | Total Capacitance V R = 4.0 V, f = 1.0 MHz | 15 | pF |
Size
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